Back to Search
Start Over
Photoelectron bremsstrahlung spectrum in synchrotron radiation excited total reflection x-ray fluorescence analysis of silicon wafers
- Source :
- Journal of Applied Physics. 86:902-908
- Publication Year :
- 1999
- Publisher :
- AIP Publishing, 1999.
-
Abstract
- When synchrotron radiation is used as an excitation source, the total reflection x-ray fluorescence analysis of surface contamination on silicon wafer has an extremely low background intensity that determines the minimum detection limit. In this article, the background spectrum originating from the photoelectron bremsstrahlung is calculated using the Monte Carlo method. The doubly differential electron bremsstrahlung cross sections obtained from the Born approximation modified by the Elwert factor and with the use of the form factor approach for screening are used instead of empirical formulas. In addition to the bremsstrahlung spectrum produced from the silicon wafer, the bremsstrahlung intensity that photoelectrons, which escape from the silicon wafer, produce in the filter attached to the detector is also calculated in accordance with the usual synchrotron radiation excited total reflection x-ray fluorescence experimental conditions. The calculated photoelectron bremsstrahlung spectra are compared with...
- Subjects :
- Physics
Total internal reflection
Silicon
Physics::Instrumentation and Detectors
Astrophysics::High Energy Astrophysical Phenomena
Bremsstrahlung
General Physics and Astronomy
chemistry.chemical_element
Synchrotron radiation
X-ray fluorescence
Electron
Photoelectric effect
chemistry
Atomic physics
Born approximation
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 86
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........bc7054c6a048f64d76256c1c8ba9f5d7