Investigation and simulation of voltage-noise characteristics of semiconductor barrier structures

Authors :: A. D. Maslov
V. G. Litvinov
A. R. Semenov
A. V. Ermachikhin
T. A. Kholomina
Source :: 2017 International Conference on Noise and Fluctuations (ICNF).
Publication Year :: 2017
Publisher :: IEEE, 2017.
Abstract: Analysis of existing theoretical concepts in low-frequency noise generation mechanisms in semiconductor barrier structures is performed. It is shown that investigation and simulation of voltage-noise characteristics offer an opportunity to calculate deep level parameters more precisely and to predict semiconductor devices reliability.

Subjects :: 010302 applied physics
Noise generation
Deep level
Computer science
business.industry
Infrasound
Electrical engineering
02 engineering and technology
Semiconductor device
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Semiconductor
Reliability (semiconductor)
0103 physical sciences
Voltage noise
0210 nano-technology
business

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