Integrated color centers in arrays of silicon carbide micropillars

We report the characterization of arrays of micropillars fabricated in an n-type 4H-SiC using photolithography to enhance the emission of bandgap color centers in silicon carbide emitting in the spectral region from 850 nm to 1400 nm. The emission is identified by the mono-vacancy of Si (VSi), silicon and carbon divacancy (VCVSi), and the nitrogenvacancy (NCVSi) using low-temperature micro-photoluminescence. These emitters are created in large ensemble by using ions implantation and annealing at a different temperature to extend the emission in the O-band region. The optical fluorescence enhancement experimental results are obtained using custom made IR confocal microscope to measure integrated PL of up to a factor of 20 compared to bulk material. This enhancement is supported by finite-element simulations considering the non-unity quantum efficiency of the emitters and their broad spectral emission at room temperature. Our study provides the pathway for quantum sensing device design and fabrication with an integrated ultrabright emission for in vivo imaging in the infrared.