GaAs-based MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics grown by atomic layer deposition

Authors :: M.R. Frei
Peide D. Ye
K.K. Ng
Minghwei Hong
S. Nakahara
H.-J.L. Gossmann
S.N.G. Chu
G. D. Wilk
J. Kwo
M. Sergent
Joseph Petrus Mannaerts
B. Yang
J. Bude
Source :: 61st Device Research Conference. Conference Digest (Cat. No.03TH8663).
Publication Year :: 2004
Publisher :: IEEE, 2004.
Abstract: In this paper, we demonstrate for the first time GaAs-based MOSFETs with excellent performance using of CVD is a very robust, highly manufacturable process.

Subjects :: chemistry.chemical_compound
Atomic layer deposition
Materials science
chemistry
business.industry
MOSFET
Electronic engineering
Optoelectronics
Dielectric
business
Gallium arsenide
High-κ dielectric

Database :: OpenAIRE
Journal :: 61st Device Research Conference. Conference Digest (Cat. No.03TH8663)
Accession number :: edsair.doi...........bd947feb5c2e166bed39401979629247
Full Text :: https://doi.org/10.1109/drc.2003.1226862

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