Cite
Characterization of C coimplanted GexSi1−xepitaxial layers formed by high dose Ge ion implantation in (100) Si
MLA
A. Kazimirov, et al. “Characterization of C Coimplanted GexSi1−xepitaxial Layers Formed by High Dose Ge Ion Implantation in (100) Si.” Journal of Applied Physics, vol. 79, Apr. 1996, pp. 3456–63. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........bde4e33de1f0ec5ea83298e402a2c2db&authtype=sso&custid=ns315887.
APA
A. Kazimirov, F. La Via, Vito Raineri, S. U. Campisano, S. Lagomarsino, K. Kyllesbech Larsen, & Salvatore Lombardo. (1996). Characterization of C coimplanted GexSi1−xepitaxial layers formed by high dose Ge ion implantation in (100) Si. Journal of Applied Physics, 79, 3456–3463.
Chicago
A. Kazimirov, F. La Via, Vito Raineri, S. U. Campisano, S. Lagomarsino, K. Kyllesbech Larsen, and Salvatore Lombardo. 1996. “Characterization of C Coimplanted GexSi1−xepitaxial Layers Formed by High Dose Ge Ion Implantation in (100) Si.” Journal of Applied Physics 79 (April): 3456–63. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........bde4e33de1f0ec5ea83298e402a2c2db&authtype=sso&custid=ns315887.