Back to Search
Start Over
Wunsch-Bell criterion dependency for silicon FET
- Source :
- 2005 15th International Crimean Conference Microwave & Telecommunication Technology.
- Publication Year :
- 2005
- Publisher :
- IEEE, 2005.
-
Abstract
- The results of electrothermal process calculations in FET are given. Calculations performed in avalanche breakdown mode till Au (used as gate substrate) melting point and achieved in any lattice point in active FET area. Discrete FET model is used to perform calculations
- Subjects :
- Avalanche diode
Dependency (UML)
Materials science
Silicon
Condensed Matter::Other
business.industry
Electrical engineering
chemistry.chemical_element
Substrate (electronics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Computer Science::Computers and Society
Avalanche breakdown
Condensed Matter::Materials Science
Computer Science::Emerging Technologies
Single-photon avalanche diode
chemistry
Melting point
Optoelectronics
Field-effect transistor
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2005 15th International Crimean Conference Microwave & Telecommunication Technology
- Accession number :
- edsair.doi...........be20be01e59bd81bdc0974dd88b62a54
- Full Text :
- https://doi.org/10.1109/crmico.2005.1565098