Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer

MLA

Yukiharu Uraoka, et al. “Improvement of the Stability of an Electric Double-Layer Transistor Using a 1H,1H,2H,2H-Perfluorodecyltriethoxysilane Barrier Layer.” Japanese Journal of Applied Physics, vol. 58, Apr. 2019, p. 040907. EBSCOhost, https://doi.org/10.7567/1347-4065/ab008c.

APA

Yukiharu Uraoka, Shoma Ishida, Yang Liu, Shimpei Ono, Yasuaki Ishikawa, Kazumoto Miwa, Juan Paolo Bermundo, Naoyuki Fujita, & Mami N. Fujii. (2019). Improvement of the stability of an electric double-layer transistor using a 1H,1H,2H,2H-perfluorodecyltriethoxysilane barrier layer. Japanese Journal of Applied Physics, 58, 040907. https://doi.org/10.7567/1347-4065/ab008c

Chicago

Yukiharu Uraoka, Shoma Ishida, Yang Liu, Shimpei Ono, Yasuaki Ishikawa, Kazumoto Miwa, Juan Paolo Bermundo, Naoyuki Fujita, and Mami N. Fujii. 2019. “Improvement of the Stability of an Electric Double-Layer Transistor Using a 1H,1H,2H,2H-Perfluorodecyltriethoxysilane Barrier Layer.” Japanese Journal of Applied Physics 58 (April): 040907. doi:10.7567/1347-4065/ab008c.