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Origin of hot carrier degradation in advanced nMOSFET devices

Authors :
Ghibaudo
F. Balestra
G. Guégan
B. Cretu
Source :
Microelectronics Reliability. 42:1405-1408
Publication Year :
2002
Publisher :
Elsevier BV, 2002.

Subjects

Subjects :
Materials science
business.industry
Optoelectronics
Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Condensed Matter Physics
business
Atomic and Molecular Physics, and Optics
Hot carrier degradation
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials

Details

ISSN :
00262714
Volume :
42
Database :
OpenAIRE
Journal :
Microelectronics Reliability
Accession number :
edsair.doi...........bfc1b03364e8975e6361c7154d91771d

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