Back to Search
Start Over
Deposition mechanism of aluminum on uranium in AlCl3-1-ethyl-3-methylimidazolium chloride ionic liquid by galvanic displacement
- Source :
- Journal of Applied Electrochemistry. 48:827-834
- Publication Year :
- 2018
- Publisher :
- Springer Science and Business Media LLC, 2018.
-
Abstract
- Aluminum (Al) coatings, which are found to be dendrites, have been deposited on uranium (U) substrate in ionic liquid via galvanic displacement. Interestingly, a dense Al nano-layer has formed between the Al dendrites and the U substrate. In this work, the growth mechanism of the Al coating has been investigated by ultraviolet–visible spectroscopy, scanning electron microscopy, grazing incidence X-ray diffraction, and electrochemical measurements: the galvanic reaction sees the oxidation of U from the substrate while Al2Cl7− are reduced on its surface, driven by the electrochemical potential difference between Al and U. Furthermore, we have found that the Al nano-layer passivates the uranium surface, which is proved to be the rate limiting step in the galvanic deposition process; the observation of the interface morphology evolution process indicates that this Al nano-layer grows in a three-dimensional mode. This work demonstrates a convenient approach to deposit dense Al nano-layer on U, without any external power source.
- Subjects :
- Materials science
1-Ethyl-3-methylimidazolium chloride
General Chemical Engineering
technology, industry, and agriculture
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
engineering.material
010402 general chemistry
021001 nanoscience & nanotechnology
Electrochemistry
01 natural sciences
0104 chemical sciences
chemistry.chemical_compound
Coating
chemistry
Chemical engineering
Aluminium
Ionic liquid
Materials Chemistry
engineering
Galvanic cell
0210 nano-technology
Electrochemical potential
Subjects
Details
- ISSN :
- 15728838 and 0021891X
- Volume :
- 48
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Electrochemistry
- Accession number :
- edsair.doi...........bfef65847c0680de94e705a8cafc1e49
- Full Text :
- https://doi.org/10.1007/s10800-018-1204-4