Metal-to-metal antifuse with low programming voltage and low on-state resistance

This paper describes and analyses the impact of the Ti layer, which is embedded between the insulator and top electrode, on the programming characteristic of the Al—HfO2—Al antifuse. The programming voltage of the antifuse with 120 A HfO2 is properly reduced from 5.5 to 4.6 V with an embedded Ti layer. Low on-state resistance (~19 Ω) and low programming voltage (4.6 V) is demonstrated in the embedded Ti antifuse with 120 A HfO2 while keeping sufficient off-state reliability. The antifuse embedded with a Ti layer between the insulator and top electrode has been developed and has potential in field programmable devices.