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Study on surface passivation by YZO/AlOx stacking double layer for crystalline Si solar cells

Authors :
Haruhiko Yoshida
Norihiro Ikeno
K. Arafune
Atsushi Ogura
Toyohiro Chikyow
Shinichi Satoh
T. Katsumata
Source :
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
Publication Year :
2014
Publisher :
IEEE, 2014.

Abstract

We investigated stacking double layer structure, the Y 2 O 3 -ZrO 2 composite film (YZO) on AlO x , for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperature by using combinatorial sputtering technique. The fixed charge densities were extracted from the flat band voltage shift in the capacitance-voltage characteristics. The as-deposited ZrO 2 film incorporated with 15% Y 2 O 3 stacking on the ALD AlO x structure showed the highest negative fixed charge of −1.9 × 1012 cm−2. The field effect passivation can be controlled by the negative fixed charges in the YZO film depending on the composition and dipole uniformly formed at AlO x /Si interface. After annealing in the oxygen atmosphere, passivation properties deteriorated caused by the Al diffusion at the YZO/AlO x interface.

Details

Database :
OpenAIRE
Journal :
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)
Accession number :
edsair.doi...........c0a8c5e4600f562d9f58cd11efca1352
Full Text :
https://doi.org/10.1109/pvsc.2014.6924993