Systematic Analysis and Characterization of Extreme Failure for IGCT in MMC-HVdc System—Part II: Failure Mechanism and Short Circuit Characteristics

Short circuit failure mode (SCFM) of IGCT under extreme failure is of vital importance in MMC-HVDC system. Due to the sealing housing package of IGCT, the short circuit mechanism is hard to be clarified. Considering this limitation, the current density changes in IGCT with different failure modes are studied in a built integrated test system with placed magnetic sensor array and thermal couple array. Then the short circuit mechanism of failed IGCT is proposed based on the experiment results. IGCT with turn off failure performs self-triggering effect due to the focused short current and increased temperature in the intial destruction area, which is usually located in a single position of the outer cathode rings. While IGCT with surge current failure shares the short current among multiple initial destruction areas, which are usually distributed evenly. SEM picture and EDX analysis show that the formed conducting alloy has spread into the molybdenum plate deeply and the phenomenon of atom diffusion (molybdenum, silicon and aluminium) near the interface is observed. Finally, long term short circuit tests of more than 12h with both turn off failure and surge current failure under 3000A prove the stable short circuit failure mode of IGCT.