Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer

MLA

A. Van Calster, et al. “Breakdown Walkout and Its Reduction in High-Voltage PLDMOS Transistors on Thin Epitaxial Layer.” Electronics Letters, vol. 28, Jan. 1992, p. 1537. EBSCOhost, https://doi.org/10.1049/el:19920976.

APA

A. Van Calster, M.-J. Zhou, G. Schols, J. Witters, & A. De Bruycker. (1992). Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer. Electronics Letters, 28, 1537. https://doi.org/10.1049/el:19920976

Chicago

A. Van Calster, M.-J. Zhou, G. Schols, J. Witters, and A. De Bruycker. 1992. “Breakdown Walkout and Its Reduction in High-Voltage PLDMOS Transistors on Thin Epitaxial Layer.” Electronics Letters 28 (January): 1537. doi:10.1049/el:19920976.