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Influence of C or In buffer layer on photoluminescence behaviour of ultrathin ZnO film
- Source :
- Journal of Applied Physics. 120:095302
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- We study the effect of the indium or carbon buffer layer on the photoluminescence (PL) property of ZnO ultrathin films deposited on a Si(100) substrate. The surface morphology of the films obtained using scanning tunnelling microscopy shows spherical shaped ZnO nanoparticles of size ∼8 nm in ZnO/C/Si and ∼22 nm in ZnO/Si samples, while the ZnO/In/Si sample shows elliptical shaped ZnO particles. Further, the ZnO/C/Si sample shows densely packed ZnO nanoparticles in comparison with other samples. Strong band edge emission has been observed in the presence of In or C buffer layer, whereas the ZnO/Si sample exhibits poor PL emission. The influence of C and In buffer layers on the PL behaviour of ZnO films is studied in detail using temperature dependent PL measurements in the range of 4 K–300 K. The ZnO/C/Si sample exhibits a multi-fold enhancement in the PL emission intensity with well-resolved free and bound exciton emission lines. Our experimental results imply that the ZnO films deposited on the C buffer ...
- Subjects :
- 010302 applied physics
Materials science
Photoluminescence
Exciton
Analytical chemistry
Wide-bandgap semiconductor
General Physics and Astronomy
Nanoparticle
chemistry.chemical_element
Nanotechnology
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
chemistry
0103 physical sciences
Emission spectrum
0210 nano-technology
Layer (electronics)
Indium
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 120
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........c121b856f11b0a9d47a5f6f439308c7a