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Study of the Influence of the Thickness of Dielectric Layer in a FED

Authors :
Wei Lei
Xiaobing Zhang
Lifang Zhang
Xing Su
Source :
2006 19th International Vacuum Nanoelectronics Conference.
Publication Year :
2006
Publisher :
IEEE, 2006.

Abstract

In our experiments a normal gate FED was fabricated by screen printing method, obtaining the spot size and brightness uniformity on the screen in the vacuum chamber. Then we measured the dielectric layer's thickness. From the measurement results, the fluctuation of the dielectric layer is found. A simulation model is also constructed to analyze the sensitivity of the thickness of the dielectric layer on the brightness uniformity.

Details

Database :
OpenAIRE
Journal :
2006 19th International Vacuum Nanoelectronics Conference
Accession number :
edsair.doi...........c1d84ced022221d1b3c2a3516ed0fa28
Full Text :
https://doi.org/10.1109/ivnc.2006.335262