Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature

Authors :: Hyun Jae Kim
Won Gi Kim
Yeong Gyu Kim
Hyukjoon Yoo
Young Jun Tak
Source :: Journal of Materials Chemistry C. 6:10376-10376
Publication Year :: 2018
Publisher :: Royal Society of Chemistry (RSC), 2018.
Abstract: Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.

Subjects :: 010302 applied physics
Indium gallium zinc oxide
Solid-state chemistry
Materials science
Passivation
business.industry
02 engineering and technology
General Chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Thin-film transistor
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Materials Chemistry
Optoelectronics
0210 nano-technology
GLUE
business
Layer (electronics)

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