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Correction: A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature
- Source :
- Journal of Materials Chemistry C. 6:10376-10376
- Publication Year :
- 2018
- Publisher :
- Royal Society of Chemistry (RSC), 2018.
-
Abstract
- Correction for ‘A selectively processible instant glue passivation layer for indium gallium zinc oxide thin-film transistors fabricated at low temperature’ by Hyukjoon Yoo et al., J. Mater. Chem. C, 2018, 6, 6187–6193.
- Subjects :
- 010302 applied physics
Indium gallium zinc oxide
Solid-state chemistry
Materials science
Passivation
business.industry
02 engineering and technology
General Chemistry
021001 nanoscience & nanotechnology
01 natural sciences
Thin-film transistor
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Materials Chemistry
Optoelectronics
0210 nano-technology
GLUE
business
Layer (electronics)
Subjects
Details
- ISSN :
- 20507534 and 20507526
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Chemistry C
- Accession number :
- edsair.doi...........c281af2ad9b8d25b7e22c469c0064449