Cu-incorporation by melt-spinning in n-type Bi2Te2.7Se0.3 alloys for low-temperature power generation

Herein, we report the enhanced thermoelectric performance of Cu incorporated Bi2Te2.7Se0.3 prepared by melt spinning. The electronic transport properties were significantly improved by Cu incorporation due to the synergetic effect of carrier tuning, band modification, and electron-phonon transport control. The steady dimensionless thermoelectric figure of merit higher than 0.90 was achieved in the wide range of temperature range of 350–450 K for Cu0.008Bi2Te2.7Se0.3, which is ~30% enhancement in comparison with pristine Bi2Te2.7Se0.3. This result can lead to high thermoelectric power generation efficiency 4.2% at ΔT = 180 K.