Emerging Graphene FETs for Next-Generation Integrated Circuit Design

Electronic devices are the basic building blocks in integrated circuits. Silicon-based devices are dominating the VLSI industry since decades. However, with miniaturization of the technology, quantum effects aggregate extensively at nano-dimensions, and silicon-based devices are harder to scale down than tens of nanometer. As a result, traditional silicon FETs at nano-era are becoming less significant. The rise of nano-era and recent research trends have shown that graphene and related materials (GRMs) are emerging as promising candidates for future devices. In this chapter, the physics governing the graphene material is discussed. Thereafter, analytical model of graphene FET (GFET) is presented. Further, advanced GFET is explored, and the high end novel GFET-based inverter and adder circuits are implemented using HSPICE. To investigate the GFET performance efficiency, a comparative analysis has also been made with respect to conventional SiFET devices. The technology node considered for SiFET is 22 nm for the various analyses presented in the chapter.