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Tuning the responsible parameters for gain characteristics of the novel type-II D-QW (InGaAs) heterostructure
- Source :
- Materials Science in Semiconductor Processing. 140:106377
- Publication Year :
- 2022
- Publisher :
- Elsevier BV, 2022.
Details
- ISSN :
- 13698001
- Volume :
- 140
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........c2d14d405e98d4acb2d41e6df81fedd7
- Full Text :
- https://doi.org/10.1016/j.mssp.2021.106377