The studies of room-temperature electrical resistivity of post-annealed LaNiO<formula><roman>3-δ</roman></formula> thin film on Si(100)/n by RF magnetron sputtering

Highly (100)-oriented LaNiO3-δ (LNO) thin film were grown on n-type Si(100) at substrate temperature 200&#176;C with 40% oxygen partial pressure. The as-deposited LNO films are metallic and have a resistivity of ~9&#215;10-4 mΩcm at room temperature (RT) and can be used as the bottom electrode for the fabrication of integrated ferroelectric capacitors on Si. A post-annealing process can decrease the RT resistivity to ~3&#215;10-4 Ωcm at 700&#176;C and yield crack at 800&#176;C.&#169; (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.