Anomalous Hall Effect in a Magnetic Topological Insulator (BiMn)2Te3

In this paper, we describe a thorough study of the structural and magneto-transport properties of Mn-doped Bi2Te3 thin films grown by magnetron sputtering. The substitution of bismuth from manganese was performed by repeating ten times an alternating deposition of Bi2Te3 and Mn layers. The crystal structure is the tetradymite with the ( $00l$ ) preferential orientation. Magnetoconductance data shows weak anti-localization phenomena at low temperatures. The presence of ferromagnetism is also demonstrating a strong anomalous Hall effect (AHE) and the sign of AHE resistances changes from negative to positive as the Mn concentration increases.