High-performance InAlN/GaN HEMTs on silicon substrate with high f T × L g

We report an 80-nm-gate-length Inalt;subagt;0.17alt;/subagt;Alalt;subagt;0.83alt;/subagt;N/GaN high-electron mobility transistor (HEMT) on silicon substrate with a record low gate leakage current of 7.12 × 10alt;supagt;-7alt;/supagt; A/mm, a record high on/off current ratio of 1.58 × 10alt;supagt;6alt;/supagt;, and a steep subthreshold swing of 65 mV/dec, which are excellent features among the reported InAlN/GaN HEMTs on Si. Due to the excellent DC performance, a current gain cutoff frequency alt;iagt;falt;/iagt;alt;subagt;Talt;/subagt; of 200 GHz is achieved, resulting in alt;iagt;falt;/iagt;alt;subagt;Talt;/subagt; × alt;iagt;Lalt;/iagt;alt;subagt;galt;/subagt; = 16 GHz μm for GaN HEMTs on Si which to the best of our knowledge is a new record.