Comparative study of carrier mobility and threshold voltage between N- and p-MOSFETs in TaN gate CMOS with EOT = 1.5-2 nm HfAlOx

Authors :: Morifumi Ohno
T. Nabatame
Hiroyuki Ota
K. Yamamoto
Koji Tominaga
Wataru Mizubayashi
H. Hisamatsu
Masaru Kadoshima
N. Yamagishi
Tsuyoshi Horikawa
Koji Akiyama
Naoki Yasuda
A. Toriumi
Kunihiko Iwamoto
Source :: Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765).
Publication Year :: 2003
Publisher :: IEEE, 2003.
Abstract: This paper demonstrates the performances of fabricated metal gate CMOS, and then focuses on fundamental issues of high-k CMOS. It is shown that a comparative study between n- and p-MOSFETs provides useful information on the V/sub th/ instability and the degradation.

Subjects :: Electron mobility
Materials science
business.industry
Electrical engineering
Hardware_PERFORMANCEANDRELIABILITY
Hafnium compounds
Threshold voltage
CMOS
Hardware_GENERAL
MOSFET
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Degradation (geology)
business
Metal gate
Hardware_LOGICDESIGN
High-κ dielectric

Database :: OpenAIRE
Journal :: Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765)
Accession number :: edsair.doi...........c41526ab99e0403b96e9d9c9d14f4e74
Full Text :: https://doi.org/10.1109/iwgi.2003.159204

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