Effect of oxygen profiles on the RS characteristics of bilayer TaOx/TaOy based RRAM

Authors :: Minghao Wu
Xinyi Li
He Qian
Ning Deng
Huaqiang Wu
Source :: 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.
Publication Year :: 2013
Publisher :: IEEE, 2013.
Abstract: Stable bipolar RRAM devices were fabricated using bi-layer tantalum (Ta) oxide deposited by reactive magnetron sputtering at room temperature with asymmetric oxygen profiles. Impacts of oxygen profiles on the resistive switching characteristics were investigated through varying tantalum oxide thickness and oxygen partial pressure during tantalum oxide deposition. A preferred oxygen profile for tantalum oxide based RRAM is proposed to achieve better performance.

Subjects :: Materials science
Bilayer
Analytical chemistry
Tantalum
Oxide
chemistry.chemical_element
Partial pressure
Oxygen
Resistive random-access memory
chemistry.chemical_compound
chemistry
Sputtering
Electronic engineering
Deposition (law)

Database :: OpenAIRE
Journal :: 2013 IEEE International Conference of Electron Devices and Solid-state Circuits
Accession number :: edsair.doi...........c4219523b714a2fd987e43028dcb4793
Full Text :: https://doi.org/10.1109/edssc.2013.6628066

Full Text Access

Tools