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LT-GaAs with high breakdown strength at low temperature for power MISFET applications
- Source :
- Journal of Electronic Materials. 24:913-916
- Publication Year :
- 1995
- Publisher :
- Springer Science and Business Media LLC, 1995.
-
Abstract
- Low temperature grown GaAs has been fabricated containing a limited amount of excess arsenic. The material has a low conductivity in the order of 100KΩ cm, due to hopping in a deep donor band. This σ-LT-GaAs was grown reproducibly by using the lattice mismatch as the primary parameter for substrate temperature calibration. Breakdown fields, in the order of 100kV/cm, are observed for planar structures and increased at low measurement emperatures. Low hopping conductivity and high breakdown field are also observed in the lossy dielectric metal-insulator-semiconductor field-effect transistor device using σ-LT-GaAs as a surface layer. The record radio frequency power density of 4.0W/mm at 77K is extracted from the dc output characteristics.
- Subjects :
- Materials science
business.industry
Transistor
Analytical chemistry
Substrate (electronics)
Dielectric
Conductivity
Condensed Matter Physics
Radio frequency power transmission
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
law
Materials Chemistry
Optoelectronics
Field-effect transistor
Power semiconductor device
Electrical and Electronic Engineering
business
MISFET
Subjects
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 24
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........c484648fc1f5babff2e4ddcb76520146