Functionalized Back-End Devices for (Bi)CMOS Circuits

Summary The generation of surface acoustic waves using a process, which is compatible with standard BEOL fabrication was demonstrated. In this process, the inter-digitated acoustic transducers are embedded in a silicon dioxide matrix, which is subsequently coated with the piezoelectric material ZnO. The delay lines with sub-μm wavelength fabricated by using this process achieve resonance frequencies in the range of 1 to 4 GHz, thus opening the door for the monolithic integration of acoustic devices in the (Bi)CMOS technology. In addition, the reliable bipolar resistive switching characteristics of TiN/HfO 2 /Ti/TiN based MIM diodes processed by a BiCMOS technology compatible process flow is demonstrated. The voltages, which are required to switch the devise from the On into the Off state and vise versa are + 1 V respectively - 1 V. The resistance ratio R OFF / R ON is in the range of 5. Acknowledgments This work was supported by the grant from German BMBF (grant No. 13N9891). ECS Transactions, 33 (6) 823-829 (2010)828