Device-level voltage control scheme of MLC NAND flash memory for storage power failure recovery

MLC NAND flash memory has been widely used as a storage device in mobile and desktop computing systems. However, MLC NAND flash memory may cause a data loss problem because the LSB-page programmed data can be lost when a power failure occurs in the middle of a MSB-page program operation. In this paper, we propose a device-level voltage control scheme in order to overcome this problem. With the theoretical feasibility of our proposed scheme, the storage controller could fully restore the LSB-page programmed data at device-level after a power failure.