Characterization of Spin-on Dopant by Sol-gel Method

P‐N junction is a basic building block for many important electron devices from as simple as a solar cell to very complicated integrated circuit. In this work, spin‐on dopant (SOD) was used as the diffusion source in order to create p‐n junction. SOD was prepared by using sol gel method. The spin‐on dopant solution ingredients contain tetraethylorthosilicate (TEOS), isopropanol (IPA), distilled water (H2O), acetone and phosphoric acid (H3PO4). The coated silicon wafers were put inside the conventional furnace for predepostion and drive in oxidation. Effect caused by varying the molarity of the acid were observed and studied using Hall Effect measurement by comparing their differences in sheet resistance, mobility, resistivity as well as sheet and bulk concentaration.