600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates

In this work we demonstrate, for the first time, the advantages of GaN HEMTs on bulk GaN substrates over similarly processed devices on Sapphire and Silicon substrates, intended for power applications, in terms of on-state and off-state operation as well as reliability, where self-heating, off-state leakage, and trapping effects are minimal. MIS-HEMTs with breakdown voltage of ∼670 V and off-state leakage current below 1 µA/mm are obtained in spite of the very basic and simple device design and technology used.