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High holding voltage SCR for robust electrostatic discharge protection
- Source :
- Chinese Physics B. 26:077304
- Publication Year :
- 2017
- Publisher :
- IOP Publishing, 2017.
-
Abstract
- A novel silicon controlled rectifier (SCR) with high holding voltage ( for electrostatic discharge (ESD) protection is proposed and investigated in this paper. The proposed SCR obtains high by adding a long N+ layer (LN+) and a long P+ layer (LP+), which divide the conventional low voltage trigger silicon controlled rectifier (LVTSCR) into two SCRs (SCR1: P+/Nwell/Pwell/N+ and SCR2: P+/LN+/LP+/N+) with a shared emitter. Under the low ESD current (, the two SCRs are turned on at the same time to induce the first snapback with high (. As the increases, the SCR2 will be turned off because of its low current gain. Therefore, the will flow through the longer SCR1 path, bypassing SCR2, which induces the second snapback with high (. The anti-latch-up ability of the proposed SCR for ESD protection is proved by a dynamic TLP-like (Transmission Line Pulse-like) simulation. An optimized of 7.4 V with a maximum failure current ( of 14.7 mA/ is obtained by the simulation.
- Subjects :
- 010302 applied physics
Electrostatic discharge
Materials science
business.industry
General Physics and Astronomy
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Electrostatic discharge protection
Silicon-controlled rectifier
Snapback
Transmission line
0103 physical sciences
Optoelectronics
0210 nano-technology
business
Low voltage
Common emitter
Voltage
Subjects
Details
- ISSN :
- 16741056
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........c60b3b33d5eab1d2ae76e079c6af2811