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Characterization of Shallow- and Deep-Level Defects in Undoped Ge1−xSnxEpitaxial Layers by Electrical Measurements
- Source :
- ECS Journal of Solid State Science and Technology. 5:P3082-P3086
- Publication Year :
- 2015
- Publisher :
- The Electrochemical Society, 2015.
- Subjects :
- 010302 applied physics
Materials science
Deep level
business.industry
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
Electronic, Optical and Magnetic Materials
Characterization (materials science)
0103 physical sciences
Optoelectronics
Electrical measurements
0210 nano-technology
business
Subjects
Details
- ISSN :
- 21628777 and 21628769
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- ECS Journal of Solid State Science and Technology
- Accession number :
- edsair.doi...........c682b5fff954eadc71396db38590ca72
- Full Text :
- https://doi.org/10.1149/2.0151604jss