Cite
Improved thermal stability and hole mobilities in a strained-Si/strained-Si1−yGey/strained-Si heterostructure grown on a relaxed Si1−xGex buffer
MLA
Minjoo L. Lee, et al. “Improved Thermal Stability and Hole Mobilities in a Strained-Si/Strained-Si1−yGey/Strained-Si Heterostructure Grown on a Relaxed Si1−xGex Buffer.” Materials Science and Engineering: B, Dec. 2005, pp. 102–06. EBSCOhost, https://doi.org/10.1016/j.mseb.2005.08.051.
APA
Minjoo L. Lee, David M. Isaacson, Eugene A. Fitzgerald, & Saurabh Gupta. (2005). Improved thermal stability and hole mobilities in a strained-Si/strained-Si1−yGey/strained-Si heterostructure grown on a relaxed Si1−xGex buffer. Materials Science and Engineering: B, 102–106. https://doi.org/10.1016/j.mseb.2005.08.051
Chicago
Minjoo L. Lee, David M. Isaacson, Eugene A. Fitzgerald, and Saurabh Gupta. 2005. “Improved Thermal Stability and Hole Mobilities in a Strained-Si/Strained-Si1−yGey/Strained-Si Heterostructure Grown on a Relaxed Si1−xGex Buffer.” Materials Science and Engineering: B, December, 102–6. doi:10.1016/j.mseb.2005.08.051.