Boron implantation effects in CdS thin films grown by chemical synthesis

CdS thin films grown on ITO/glass substrates by using chemical bath (CB) were boron-implanted employing 100 keV beam of boron ions (B + ) with fluences in the range 1.0×10 15 –1.0×10 16 ions/cm 2 . The B doping was successfully carried out, as was proved by the major carrier density introduced in the range 0.8×10 18 –5.4×10 18 cm −3 , which was calculated from thermo power measurements. Raman spectroscopy results support the assumption that triply ionized boron (B 3+ ) enters into the CdS lattice occupying Cd 2+ sites, which create shallow donor levels in the forbidden energy band gap.