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Thick c-BN films deposited by radio frequency magnetron sputtering in argon/nitrogen gas mixture with additional hydrogen gas
- Source :
- Chinese Physics B. 25:106801
- Publication Year :
- 2016
- Publisher :
- IOP Publishing, 2016.
-
Abstract
- The excellent physical and chemical properties of cubic boron nitride (c-BN) film make it a promising candidate for various industry applications. However, the c-BN film thickness restricts its practical applications in many cases. Thus, it is indispensable to develop an economic, simple and environment-friend way to synthesize high-quality thick, stable c-BN films. High-cubic-content BN films are prepared on silicon (100) substrates by radio frequency (RF) magnetron sputtering from an h-BN target at low substrate temperature. Adhesions of the c-BN films are greatly improved by adding hydrogen to the argon/nitrogen gas mixture, allowing the deposition of a film up to 5-μm thick. The compositions and the microstructure morphologies of the c-BN films grown at different substrate temperatures are systematically investigated with respect to the ratio of H2 gas content to total working gas. In addition, a primary mechanism for the deposition of thick c-BN film is proposed.
- Subjects :
- 010302 applied physics
Argon
Materials science
Silicon
General Physics and Astronomy
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
Sputter deposition
Nitride
021001 nanoscience & nanotechnology
01 natural sciences
chemistry.chemical_compound
chemistry
Chemical engineering
Sputtering
Boron nitride
0103 physical sciences
Thin film
0210 nano-technology
Subjects
Details
- ISSN :
- 16741056
- Volume :
- 25
- Database :
- OpenAIRE
- Journal :
- Chinese Physics B
- Accession number :
- edsair.doi...........c7fa71258d73b144a80b95884593aba6