Erratum: 'Fully ALD-grown TiN/Hf0.5Zr0.5O2/TiN stacks: Ferroelectric and structural properties' [Appl. Phys. Lett. 109, 192903 (2016)]

Authors :: Andrei Zenkevich
Andrey M. Markeev
Sergei Zarubin
A. G. Chernikova
Maksim Spiridonov
Elena I. Suvorova
Dmitrii Negrov
Source :: Applied Physics Letters. 109:259901
Publication Year :: 2016
Publisher :: AIP Publishing, 2016.

Subjects :: Atomic layer deposition
Materials science
Physics and Astronomy (miscellaneous)
chemistry
business.industry
Inorganic chemistry
Ferroelectric thin films
chemistry.chemical_element
Optoelectronics
Tin
Hafnium compounds
business
Ferroelectricity

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