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6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations
- Source :
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:119-125
- Publication Year :
- 2021
- Publisher :
- The Institute of Electronics Engineers of Korea, 2021.
Details
- ISSN :
- 22334866 and 15981657
- Volume :
- 21
- Database :
- OpenAIRE
- Journal :
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Accession number :
- edsair.doi...........c88914d99507f9420765a016a1dd08c1
- Full Text :
- https://doi.org/10.5573/jsts.2021.21.2.119