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6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations

Authors :
In Ho Kang
Wook Bahng
Hojun Lee
Hyoung Woo Kim
Ogyun Seok
Junki Jung
Source :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE. 21:119-125
Publication Year :
2021
Publisher :
The Institute of Electronics Engineers of Korea, 2021.

Details

ISSN :
22334866 and 15981657
Volume :
21
Database :
OpenAIRE
Journal :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Accession number :
edsair.doi...........c88914d99507f9420765a016a1dd08c1
Full Text :
https://doi.org/10.5573/jsts.2021.21.2.119