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Single to multi-scale texturing for high efficiency micromorph thin film silicon solar cell
- Source :
- 2011 37th IEEE Photovoltaic Specialists Conference.
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- Improving micromorph devices performances nowadays requires a current density increase: good devices typically exhibit an open circuit voltage times fill factor product of one (V oc ×FF∼1.4V×0.71=1). Their short-circuit current density (J sc ) value thus dictates their efficiency (expressed in %). Maximizing it with reasonable cells thicknesses necessitates therefore combining robust cell design with adequate light management through transparent electrodes and intermediate reflectors engineering. We will first show how record micromorph devices (13.5% initial and >11.5% stabilized efficiencies) are prepared on optimized single-layer ZnO electrodes. Such electrodes requirements will be discussed: 1) Strong and wide light scattering is needed on the entire useful wavelength range. Large features grant high total currents (>26mA/cm2) while sharp ones allow for high top cell currents (>13mA/cm2). 2) Sufficiently small or smooth substrate features permits high quality cell growth, providing good cell design (typically V oc over 1.4V). 3) Good conduction and transparency for electrodes (requiring ∼50cm2/V/s TCO mobility) should preserve sheet resistance close to 20Ω/□ (for FF>70%) with low absorption. We will then focus on pushing further micromorph devices potential. Either textured intermediate reflectors can fulfill the bottom cell needs, or double-texture substrates can be implemented: light scattering at large wavelengths is here achieved via nanoimprint lithography (a versatile approach to glass-texturing), topped by small and sharp ZnO features guaranteeing high top cell current. By combining excellent TCO with smart under-structures, thin devices delivering high currents with excellent efficiencies are within reach.
Details
- Database :
- OpenAIRE
- Journal :
- 2011 37th IEEE Photovoltaic Specialists Conference
- Accession number :
- edsair.doi...........c99bfe701d647d2d9afe3f57007c5dec
- Full Text :
- https://doi.org/10.1109/pvsc.2011.6186072