New InGaAs THz Schottky Detectors with Nanowire Contact for Zero-Bias Operation

In this paper we report a new THz Schottky detector based on vertically contacted high doped (1 × 1018cm −3) indium gallium arsenide (InGaAs) by using a small diameter (100 nm) silver nanowire (NW) as air-bridge contact. Compared to Schottky diodes based on gallium arsenide (GaAs) it has better zero-bias operation of 100 μA @ 0.05 V raising to more than 1 mA @ 0.27 V for lower noise application.