Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate

Authors :: Jinbang Ma
Yachao Zhang
Yixin Yao
Tao Zhang
Yifan Li
Qian Feng
Zhen Bi
Jincheng Zhang
Yue Hao
Source :: Journal of Electronic Materials. 51:3342-3349
Publication Year :: 2022
Publisher :: Springer Science and Business Media LLC, 2022.

Subjects :: Materials Chemistry
Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

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