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Effects of Al Preflow on the Uniformity of an AlN Nucleation Layer and GaN Grown on Si (111) Substrate
- Source :
- Journal of Electronic Materials. 51:3342-3349
- Publication Year :
- 2022
- Publisher :
- Springer Science and Business Media LLC, 2022.
Details
- ISSN :
- 1543186X and 03615235
- Volume :
- 51
- Database :
- OpenAIRE
- Journal :
- Journal of Electronic Materials
- Accession number :
- edsair.doi...........c9e8ca3b8b8bc382cfbd0d6ddf0ae647