Erratum: 'Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si' [Appl. Phys. Lett. 105, 172105 (2014)]

Authors :: Burcu Ozden
Fei Tong
Chungman Yang
Mobbassar Hassan Sk
Min P. Khanal
Ayayi C. Ahyi
Vahid Mirkhani
Minseo Park
Source :: Applied Physics Letters. 106:219902
Publication Year :: 2015
Publisher :: AIP Publishing, 2015.

Subjects :: Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
Silicon
Condensed matter physics
business.industry
Photoconductivity
Transistor
Wide-bandgap semiconductor
chemistry.chemical_element
High-electron-mobility transistor
law.invention
Ultraviolet visible spectroscopy
chemistry
law
Electrical resistivity and conductivity
Optoelectronics
business

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