Growth of thick and high crystalline quality InGaN layers on GaN (0001¯) substrate using tri-halide vapor phase epitaxy

The growth of thick InGaN layers on free-standing GaN (0001¯) substrates was studied using tri-halide vapor phase epitaxy. It was found that high-indium-content InGaN can be grown under higher InCl 3 input partial pressure at higher growth temperature, which allows the fabrication of a high crystalline quality InGaN layer with a smooth surface morphology. Using the growth conditions of high InCl 3 input partial pressure and high growth temperature, crack- and droplet-free InGaN layers with a thickness of over 10 µm and with an indium fraction of 0.05 were successfully grown. Although the surface showed many hillocks, the number of hillocks was reduced upon growth of thicker InGaN layers. Photoluminescence measurements confirm that thick InGaN layers could be successfully grown without degradation of the crystalline quality.