A novel top-down fabrication process for Ge2Sb2Te5 phase change material nanowires

Authors :: Gillian Reid
Kian Shen Kiang
Ruiqi Chen
Andrew L. Hector
Ruomeng Huang
Kai Sun
Behrad Gholipour
C.H. de Groot
Yudong Wang
Daniel W. Hewak
Source :: 2013 13th Non-Volatile Memory Technology Symposium (NVMTS).
Publication Year :: 2013
Publisher :: IEEE, 2013.
Abstract: A novel e-beam free, top-down spacer etch process was used to fabricate sub-hundred nanometer Ge2Sb2Te5 phase change nanowires. Naowires with a cross-section dimension of 50 nm × 100 nm (width × height) were obtained and phase change functionality demonstrated.

Subjects :: Phase change
Fabrication
Materials science
Scientific method
Nanowire
Nanometre
Nanotechnology
Phase-change material

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