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Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition
- Source :
- Applied Physics Letters. 93:161905
- Publication Year :
- 2008
- Publisher :
- AIP Publishing, 2008.
-
Abstract
- We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%–70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/cm2.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 93
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........cc5eacc32498129aa06736ba4d064113
- Full Text :
- https://doi.org/10.1063/1.3002300