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Violet-light spontaneous and stimulated emission from ultrathin In-rich InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

Authors :
Bong-Joon Kwon
Jin-Soo Chung
Yong-Hoon Cho
Euijoon Yoon
Heejin Kim
Soon-Yong Kwon
Ho-Sang Kwack
Source :
Applied Physics Letters. 93:161905
Publication Year :
2008
Publisher :
AIP Publishing, 2008.

Abstract

We investigated the spontaneous and stimulated emission properties of violet-light-emitting ultrathin In-rich InGaN/GaN multiple quantum wells (MQWs) with indium content of 60%–70%. The Stokes shift was smaller than that of In-poor InGaN MQWs, and the emission peak position at 3.196 eV was kept constant with increasing pumping power, indicating negligible quantum confined Stark effect in ultrathin In-rich InGaN MQWs despite of high indium content. Optically pumped stimulated emission performed at room temperature was observed at 3.21 eV, the high-energy side of spontaneous emission, when the pumping power density exceeds ∼31 kW/cm2.

Details

ISSN :
10773118 and 00036951
Volume :
93
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........cc5eacc32498129aa06736ba4d064113
Full Text :
https://doi.org/10.1063/1.3002300