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Analysis for positions of Sn atoms in epitaxial Ge1−xSnx film in low temperature depositions
- Source :
- Thin Solid Films. 557:173-176
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- We investigated the position of Sn atoms in Ge1 − xSnx film grown at a low temperature by using the Extended X-ray Absorption Fine Structure (EXAFS) method. Vacancies had been expected to be introduced near the growing surface vicinity of a Sn atom and located at a split-vacancy position due to the binding nature between a Sn atom and a vacancy, which was predicted by the calculation for a bulk model in the literature. However, the EXAFS showed that almost all Sn atoms were located at the substitutional position and did not form a split-vacancy.
- Subjects :
- Materials science
Extended X-ray absorption fine structure
Metals and Alloys
chemistry.chemical_element
Crystal growth
Surfaces and Interfaces
Epitaxy
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Crystallography
chemistry
Vacancy defect
Atom
Materials Chemistry
Absorption (chemistry)
Tin
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 557
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........cc85cae299cc44fe67ecc1745c31469a
- Full Text :
- https://doi.org/10.1016/j.tsf.2013.10.070