Growth of 2-Inch α-Ga2O3 Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition

The effectiveness of rear-flow-controlled mist chemical vapor deposition (mist CVD) for the growth of 2-inch α-Ga2O3 epilayers was studied. The numerical simulation indicated that the low velocity of the flow is appropriate for inducing an upward flow on the growth front without a vortex. Under the flow velocity of 0.08 m/s, α-Ga2O3 the epilayers were successfully grown on c-plane sapphire substrates. The epilayers were high-quality with full widths at half maximum of 42 arcsec and 1993 arcsec for the (0006) and (104) plane reflections, respectively. The rear-flow-controlled mist CVD was demonstrated to be effective for long-time growth. The thickness was adequately increased with increasing growth time. At the same time, corundum α-phase crystal features were distinguished. The suggested mist CVD system not only provides a cost-saving solution for Ga2O3 epilayers' growth but is also effective for retaining the uniformity of the Ga2O3 epilayers over a large area.