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Sub-ns Field-Free Switching in Perpendicular Magnetic Tunnel Junctions by the Interplay of Spin Transfer and Orbit Torques

Authors :
Zongxia Guo
Jialiang Yin
Kaihua Cao
Zhaohao Wang
Zilu Wang
Daoqian Zhu
Yan Huang
Gefei Wang
Wenlong Cai
Kewen Shi
Weisheng Zhao
Yudong Zhuo
Source :
IEEE Electron Device Letters. 42:704-707
Publication Year :
2021
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2021.

Abstract

The interplay of spin-transfer torque (STT) and spin-orbit torque (SOT) highlights the potential of current-induced magnetization reversal for the ultrahigh-speed and ultralow-power memory applications. However, the ultrafast field-free switching and its dynamic mechanism have not been clarified yet. Here, we experimentally demonstrate the sub-nanosecond field-free switching by the interplay of STT and SOT in perpendicular magnetic tunnel junctions (MTJs). The dynamic investigations of the STT and SOT switching reveal that the applied SOT current can highly decrease the incubation time and current density of STT, which leads to the achievement of ultra-fast switching. Besides, the timing scheme investigations of SOT and STT pulses are performed. The firstly applied SOT current further decreases the transition time of the magnetization switching, which could result from the different nucleation and motions of domains. The interplay and the timing operations of STT and SOT provide more flexible solutions for high-speed, large-scalability and energy efficient memory applications.

Details

ISSN :
15580563 and 07413106
Volume :
42
Database :
OpenAIRE
Journal :
IEEE Electron Device Letters
Accession number :
edsair.doi...........ccb2e94f753c3a8f9a02f5475e59e48a
Full Text :
https://doi.org/10.1109/led.2021.3069391