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The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon (Adv. Quantum Technol. 2/2018)
- Source :
- Advanced Quantum Technologies. 1:1870021
- Publication Year :
- 2018
- Publisher :
- Wiley, 2018.
- Subjects :
- Nuclear and High Energy Physics
Materials science
Silicon
Condensed matter physics
Annealing (metallurgy)
chemistry.chemical_element
Statistical and Nonlinear Physics
Condensed Matter Physics
Electronic, Optical and Magnetic Materials
Bismuth
Ion
Computational Theory and Mathematics
chemistry
Lattice (order)
Electrical and Electronic Engineering
Hyperfine structure
Quantum
Mathematical Physics
Subjects
Details
- ISSN :
- 25119044
- Volume :
- 1
- Database :
- OpenAIRE
- Journal :
- Advanced Quantum Technologies
- Accession number :
- edsair.doi...........cd484e610a405f24f22ad27ff5219beb
- Full Text :
- https://doi.org/10.1002/qute.201870021