Back to Search
Start Over
Coalescence overgrowth of GaN nanocolumns
- Source :
- 2008 International Nano-Optoelectronics Workshop.
- Publication Year :
- 2008
- Publisher :
- IEEE, 2008.
-
Abstract
- Coalescence overgrowth of GaN nanocolumns on Si and sapphire substrates with metalorganic chemical vapor deposition is implemented to show high crystal and optical qualities. Depth-dependent X-ray diffraction is realized to understand the coalescence growth process.
Details
- Database :
- OpenAIRE
- Journal :
- 2008 International Nano-Optoelectronics Workshop
- Accession number :
- edsair.doi...........cdb7edae8a618d094782de70bee9e2fd