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Impact of Band-Engineering to Performance of High- k Multilayer Based Charge Trapping Memory
- Source :
- Chinese Physics Letters. 32:088501
- Publication Year :
- 2015
- Publisher :
- IOP Publishing, 2015.
-
Abstract
- Impact of band-engineering to the performance of charge trapping memory with HfO2/Ta2O5/HfO2 (HTH) as the charge trapping layer is investigated. Compared with devices with the same total HfO2 thickness, structures with Ta2O5 closer to substrates show larger program/erase window, because the 2nd HfO2 (next to blocking oxide) serving as part of blocking oxide reduces the current tunneling out of/in the charge trapping layer during program and erase. Moreover, trapped charge centroid is modulated and contributed more to the flat-band voltage shift. Further experiments prove that devices with a thicker 2nd HfO2 layer exhibit larger saturate flat-band shift in both program and erase operation. The optimized device achieves a 7 V memory window and good reliability characteristics.
Details
- ISSN :
- 17413540 and 0256307X
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Chinese Physics Letters
- Accession number :
- edsair.doi...........cdef2429a66586431c0fa5303032893c