Sn-Based Group-IV Structure for Resonant Tunneling Diodes

Authors :: Henry H. Cheng
Guo-En Chang
Bing-Hung Tsai
Richard A. Soref
Greg Sun
Jia-Zhi Chen
Kun-Yuan Wu
V. I. Mashanov
Source :: IEEE Electron Device Letters. 34:951-953
Publication Year :: 2013
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 2013.
Abstract: We report a theoretical investigation on the electrical properties of a Sn-based group-IV structure for a resonant tunneling diode (RTD). The analysis on the composition-dependent strain, energy profile, and current-voltage characteristic of a double-barrier heterostructure shows that the peak current density and peak-to-valley ratio are enhanced with a moderated tensile strain in the barrier layer, providing an alternative approach for group-IV RTDs.